Application of doped silicon oxide films in solar cell technology
| Autor: | K Grigoras, A Major, I Simkiene, E Gaubas |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Fabrication business.industry Doping Analytical chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Monocrystalline silicon Condensed Matter::Materials Science law Condensed Matter::Superconductivity Solar cell Materials Chemistry Optoelectronics Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering Silicon oxide business Absorption (electromagnetic radiation) Microwave Common emitter |
| Zdroj: | Semiconductor Science and Technology. 13:517-522 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/13/5/013 |
| Popis: | Silicon oxide films phosphorus doped and formed by a spin-on technique are proposed for the manufacture of shallow, heavily doped -p junctions. The structures were investigated using electron microscopy, optical and electrical methods. Transient microwave absorption measurements were performed to monitor the quality of the doping by evaluation of the surface recombination velocity and the bulk lifetime. Such a simple -p junction formation technique is suitable for the fabrication of a silicon solar cell with a highly doped and shallow emitter. The usual recombination rates at the surfaces are reduced by more than an order of magnitude. The tentative solar cells have been manufactured, and an efficiency of 12% was achieved. |
| Databáze: | OpenAIRE |
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