Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications
Autor: | Tony Schenk, Franz P. G. Fengler, Thomas Mikolajick, Min Hyuk Park, Ulrich Böttger, Milan Pešić, S. Starschich, Theodor Schneller, Uwe Schroeder |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science business.industry Doping chemistry.chemical_element 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Lead zirconate titanate 01 natural sciences Ferroelectricity Hafnium Non-volatile memory chemistry.chemical_compound chemistry 0103 physical sciences Electronic engineering Optoelectronics Process window 0210 nano-technology business Perovskite (structure) |
Zdroj: | ESSDERC |
Popis: | Ferroelectric random access memories (FRAM) are nonvolatile memories which allow a fast access time and a low power consumption. State-of-the-art devices are based on the perovskite lead zirconate titanate (PZT), which suffers from CMOS incompatibility resulting in scaling issues. The discovery of the ferroelectricity in doped hafnium oxide enabled scaled 3D memory devices. A variety of dopants has already been found to stabilize the orthorhombic phase, responsible for ferroelectric switching. Interestingly, among the variety of dopants only a mixed hafnium zirconium oxide (HZO) enabled a wide process window together with a large memory window. Here, we compare PZT with HZO and show that despite different dielectric properties similar memory relevant performance can be achieved. Additionally, analogous wake-up and degradation behavior can be observed in both materials. Moreover, we show experimental proof that a thermally driven wake-up in both material systems is caused by diffusion of ionic charges. Extracted activation energy hints to oxygen vacancy movement as the main cause for the wake-up effect in HZO. |
Databáze: | OpenAIRE |
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