Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy
| Autor: | Gisha E. Luckachan, Nicoleta Doriana Banu, Radu V. Vladea, Saeed M. Alhassan, Jamie Whelan, Samuel Stephen, Anjana Tharalekshmy, Ionut Banu, Marios S. Katsiotis |
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| Rok vydání: | 2016 |
| Předmět: |
Anatase
Titanium carbide Materials science General Chemical Engineering Analytical chemistry General Chemistry Biochemistry Industrial and Manufacturing Engineering Titanium oxide symbols.namesake chemistry.chemical_compound chemistry Rutile X-ray crystallography Materials Chemistry symbols Silicon carbide Raman spectroscopy High-resolution transmission electron microscopy |
| Zdroj: | Chemical Papers. 70 |
| ISSN: | 1336-9075 0366-6352 |
| Popis: | Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM. |
| Databáze: | OpenAIRE |
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