Catalytic control of anisotropic silicon etching
| Autor: | Larry W. Austin, Harold G. Linde |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
inorganic chemicals
Silicon Chemistry Stereochemistry technology industry and agriculture Metals and Alloys chemistry.chemical_element Condensed Matter Physics Isotropic etching Surfaces Coatings and Films Electronic Optical and Magnetic Materials Catalysis Crystal Surface micromachining Chemical engineering Etching (microfabrication) Dry etching Electrical and Electronic Engineering Reactive-ion etching Instrumentation |
| Zdroj: | Sensors and Actuators A: Physical. 49:181-185 |
| ISSN: | 0924-4247 |
| Popis: | A wide variety of oxidative catalysts have been tested in altering the wet chemical etching of the three major crystal faces of silicon, using a solution of gallic acid—ethanolamine—water. Significant variations in etch selectivity occur, where both the concentration and the nature of the catalyst are important. The results are useful in the micromachining of silicon. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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