The influence of the conditions of synthesis on the composition and mechanical properties of silicon oxycarbonitride nanocomposite films
| Autor: | E. A. Maksimovskiy, Yu. M. Rumyantsev, N. I. Fainer, A. G. Plekhanov, M. N. Khomyakov |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Nanocomposite Silicon Organic Chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element 02 engineering and technology Dielectric Chemical vapor deposition Nanoindentation Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Amorphous solid chemistry 0103 physical sciences Materials Chemistry Graphite 0210 nano-technology |
| Zdroj: | Protection of Metals and Physical Chemistry of Surfaces. 53:253-260 |
| ISSN: | 2070-206X 2070-2051 |
| DOI: | 10.1134/s2070205117020095 |
| Popis: | Dielectric films of hydrogenated silicon oxycarbonitride SiC x N y O z :H were prepared by plasmaenhanced chemical vapor deposition using gas mixtures of 1,1,1,3,3,3-hexamethyldisilazane (HMDS) or 1,1,3,3-tetramethyldisilazane (TMDS) with oxygen and nitrogen in the temperature range of 373–973 K. The effect of the conditions of synthesis on the chemical and phase composition of the films was studied, in the amorphous part of which nanocrystals belonging to the phases of the Si–C–N system α-Si3N4, α-Si3–x C x N4, and graphite were distributed. To measure the hardness and Young’s modulus, the nanoindentation method was used. The influence that the synthesis temperature and nitrogen-to-oxygen ratio in the initial gas mixtures HMDS + O2 + xN2 and TMDS + O2 + xN2 have on the hardness and Young’s modulus of the resulting SiC x N y O z :H films was investigated. The maximum obtained values of these parameters were 20.4 and 201.5 GPa, respectively. |
| Databáze: | OpenAIRE |
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