A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT
| Autor: | Marco Dietz, Matthias Voelkel, Robert Weigel, Sascha Breun, Vadim Issakov, Albert-Marcel Schrotz |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering dBc 020206 networking & telecommunications 02 engineering and technology Chip Bicmos technology Phase-locked loop Voltage-controlled oscillator D band 0202 electrical engineering electronic engineering information engineering Optoelectronics Center frequency Wideband business |
| Zdroj: | 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). |
| Popis: | This paper presents a low-power wideband push-push voltage controlled oscillator (VCO), achieving a frequency tuning-range (FTR) of 19 GHz (14%) at a center frequency of 136 GHz. The VCO yields a minimum phase noise of −86.5 dBc/Hz at 1 MHz offset at a power consumption of around 27 mW from a 1.8 V supply, which yields a $\mathrm{FOM}_{\mathrm{T}}$ of −178 dBc/Hz. The chip is fabricated using a 130 nm SiGe BiCMOS technology with $f_{\mathrm{t}}/f_{\max}$ of 250 GHz/370 GHz, respectively, and is integrated with a by-32 divider chain attached to the fundamental output of the VCO, offering a 2.1 GHz output for an external phase-locked loop (PLL). |
| Databáze: | OpenAIRE |
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