Interfacial reactions between Cu substrate and Sn–1Ag–0.5Cu solder containing 0.1 wt% Al by dipping method
| Autor: | Mohammad Hossein Mahdavifard, Suhana Mohd Said, Iswadi Jauhari, Mohamed Bashir Ali Bashir, Mohamed Hamid Elsheikh, Dhafer Abdulameer Shnawah, Mohd Faizul Mohd Sabri |
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| Rok vydání: | 2015 |
| Předmět: |
Interfacial reaction
Materials science Metallurgy Intermetallic Substrate (chemistry) chemistry.chemical_element Condensed Matter Physics Aging test Copper Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Chemical engineering Dip soldering chemistry Soldering Electrical and Electronic Engineering Layer (electronics) |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 26:8229-8239 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-015-3486-1 |
| Popis: | Effects of 0.1 wt% Al addition to Sn–1Ag–0.5Cu (SAC105) on the structure of solder/copper interface have been studied. The solder/copper joint assembly was prepared by dip soldering process at 250 °C for 10 s and then aged thermally at 150 °C for 500 h for an accelerating aging test. Results show that the addition of Al does not change the type of the reaction product with the Cu substrate. The reaction product is always Cu6Sn5 and Cu3Sn phases formed at the solder/copper interface. However, it is found that the addition of Al retards the interfacial reaction and suppresses the growth of interfacial intermetallic layer(s). Potential mechanisms are proposed to explain the effects of Al addition on the solder/copper interfacial reactions. |
| Databáze: | OpenAIRE |
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