| Autor: |
P. V. Vinokurov, E. F. Boiakinov, E. I. Zakharkina, S. A. Smagulova, A. A. Semenova |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.5079366 |
| Popis: |
Transition metal dichalcogenides, like MoS2, were attracted attention due to their optoelectronic properties. But fabrications of such materials still a challenge task. In this work, chemical vapor deposition (CVD) was used to synthesize two-dimensional MoS2 from S and MoO3 powders on SiO2. Lateral size of domains were up to 80 mkm and thickness of single-layered MoS2 was 0.9 nm. The structural and optical properties of the obtained two-dimensional MoS2 are studied. We find that the formation of MoS2 domains with different size is dependent on location of the SiO2 substrates. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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