THE LATEST ADVANCES IN HIGH-DIELECTRIC THIN-FILM CAPACITOR TECHNOLOGY FOR GHz-RF DEVICES
| Autor: | Kentaro Morito, Yoshiki Iwazaki, Toshimasa Suzuki |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Permittivity
Dielectric absorption Materials science business.industry Gate dielectric Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Capacitor Control and Systems Engineering law Materials Chemistry Ceramics and Composites Optoelectronics Equivalent circuit Dielectric loss Capacitance probe Electrical and Electronic Engineering business |
| Zdroj: | Integrated Ferroelectrics. 76:47-57 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584580500413525 |
| Popis: | We present parallel-plate (Ba,Sr)TiO3 and SrTiO3 thin-film capacitor technology on silicon for RF devices. The in-plane thermal stress that is critical to low expansive Si substrates can be controlled by tuning the sputtering deposition pressure, and a corresponding change in the permittivity due to the electrostrictive effect is observed. The high-frequency dielectric response analysis combined with the equivalent circuit model and electromagnetic simulation enables accurate estimation of the intrinsic dielectric properties, thus demonstrating the linear increase of dielectric loss with frequency. With the bias applied, an electromechanical resonance appears in the GHz band due to piezoelectric effect, which is reproduced using the finite element method. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|