Electronic properties of Ga-In-Zn-O (GIZO) thin films: Effect of post-annealing
| Autor: | Dong-Seok Yang, Nam Seok Park, Hee Jae Kang, Dahlang Tahir |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Radiation
Materials science 010304 chemical physics Absorption spectroscopy Annealing (metallurgy) Band gap Electron energy loss spectroscopy Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electron spectroscopy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials X-ray absorption fine structure X-ray photoelectron spectroscopy 0103 physical sciences Physical and Theoretical Chemistry Thin film 0210 nano-technology Spectroscopy |
| Zdroj: | Journal of Electron Spectroscopy and Related Phenomena. 234:1-4 |
| ISSN: | 0368-2048 |
| DOI: | 10.1016/j.elspec.2019.05.002 |
| Popis: | Effect of post annealing temperature on electronic properties of Ga-In-Zn-O (GIZO) have quantitatively studied by using reflection electron energy loss spectroscopy (REELS), x-ray photoelectron spectroscopy (XPS), and x-ray absorption fine structure (XAFS) spectra. The band gap values of GIZO are 3.1 eV, 3.5 eV, and 3.8 eV, at room temperature (as deposited), post-annealing at 600 °C, and 700 °C, respectively. The composition of Ga increased and Zn reduced with increasing post-annealing temperature. The formation of Ga-(Ga,Zn) and Zn-(Zn,Ga) bonds in GIZO thin film annealed at 700 °C was confirmed by XAFS study. The electronic properties of GIZO thin films strongly affected by the bonding formation of Zn-O and Ga-O as the effect of annealing temperature. |
| Databáze: | OpenAIRE |
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