Autor: |
J. D. Fuhr, M. L. Martiarena, Esteban A. Sanchez, E. D. Cantero, O. Grizzi, E. Martinez |
Rok vydání: |
2019 |
Předmět: |
|
Zdroj: |
Materials Today: Proceedings. 14:148-151 |
ISSN: |
2214-7853 |
DOI: |
10.1016/j.matpr.2019.05.073 |
Popis: |
We present an analysis of Ge films grown on Au(111) and Al(111) under UHV conditions, including studies on the desorption and segregation of Ge. For desorption of a multilayer Ge/Au film, a two-step process was observed with a smooth transition in the 500-770 K range. For the case of Ge/Al a sharp desorption process takes place at ∼500 K. The final products at the surface are also different; no Ge was found after annealing the Ge/Al sample, while some Ge (of the order of 10% of ML) was found after annealing the Ge/Au sample; attributed to segregation from the bulk. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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