Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

Autor:	Gautam Ganguly, Z. Lu, C. R. Wronski, Quan Yuan, Eric A. Schiff, Steluta A Dinca, V. Vlahos
Rok vydání:	2003
Předmět:	Monocrystalline silicon Amorphous silicon Electron mobility chemistry.chemical_compound Materials science Field (physics) Condensed matter physics chemistry Nanocrystalline silicon Valence band Deposition (law) Amorphous solid
Zdroj:	MRS Proceedings. 762
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-762-a7.1
Popis:	We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10-9 cm2/V), hole mobilities reach values as large as 0.01 cm2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9f2284c167216f54b57d01e2fcc0bc44 https://doi.org/10.1557/proc-762-a7.1 Zobrazit plný text záznamu Full text from SpringerLink