Modelling of the surface potential evolution for a stressed submicronic MOSFET

Autor:	A. Bouhdada, R. Marrakh
Rok vydání:	2000
Předmět:	Materials science Gaussian General Engineering Mechanics Poisson distribution Standard deviation Stress (mechanics) symbols.namesake Classical mechanics Electric field MOSFET symbols Poisson's equation Hot-carrier injection
Zdroj:	Microelectronics Journal. 31:91-94
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(99)00092-0
Popis:	We propose a model to determine the surface potential evolution for a stressed submicronic MOSFET. Stress conditions are chosen in a manner so that the interface states generated by the hot electron injection at the Si–SiO 2 interface are dominant. The stress generated defects vary in time and are simulated by a spatial and temporal Gaussian distribution centred close to the extremity of the channel near the drain. The Gaussian parameters (standard deviation and maximum) vary according to the stress time. The surface potential model is derived by solving the two-dimensional Poisson's equation according to the spatial and temporal charge variation in the channel and electric field during stress time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9f1b0eb3dbb767a43edac791895dc285 https://doi.org/10.1016/s0026-2692(99)00092-0 Zobrazit plný text záznamu Full Text from ScienceDirect