| Autor: |
Makoto Okada, Yukihiro Higaki, Shintaro Miyazawa, Yuui Shimizu, Yasushi Nanishi, Takayuki Yanagi, Takao Ishii |
| Rok vydání: |
1998 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. :213-217 |
| ISSN: |
0022-0248 |
| Popis: |
GaN thin films were grown at relatively low temperatures on multi-domain LiGaO 2 substrates by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). LiGaO 2 is one of the most promising substrates for GaN epitaxial growth because of its small lattice mismatch of around 0.9%. The multi-domain LiGaO 2 substrate has two different polarity domains in the (0 0 1) surface. Two different GaN surface morphologies depending on the surface polarities were observed by atomic force microscopy (AFM). The difference was also observed in the shift of photoluminescence (PL) spectra. Each peak corresponding to two inversion domains was shifted in parallel around 2 nm. One possible explanation for the cause of the peak wavelength shift is due to the difference of the strains in GaN thin films. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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