The use of ion irradiation for converting superconducting thin-film NbN into niobium oxide Nb2O5
| Autor: | B. V. Goncharov, K. E. Prihod’ko, D. A. Komarov, Z. V. Lavrukhina, M. A. Tarkhov, M. M. Dement’eva, L. V. Kutuzov, E. D. Ol’shanskii, Evgenia Kuleshova, A. G. Domantovskii, B. A. Gurovich, D. A. Goncharova, V. L. Stolyarov |
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| Rok vydání: | 2015 |
| Předmět: |
Niobium nitride
Fabrication Materials science business.industry General Engineering Analytical chemistry Dielectric Condensed Matter Physics chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Sputtering Transmission electron microscopy Optoelectronics Niobium oxide General Materials Science Thin film business |
| Zdroj: | Nanotechnologies in Russia. 10:530-536 |
| ISSN: | 1995-0799 1995-0780 |
| DOI: | 10.1134/s1995078015040072 |
| Popis: | It is shown experimentally that the use of ion irradiation allows one to convert superconducting thin-film niobium nitride into dielectric niobium oxide in a controllable manner. The conversion of NbN into Nb2O5 throughout the entire thickness of the film is demonstrated via transmission electron microscopy and layer-by-layer XPS analysis. This conversion is followed by a corresponding increase in the film thickness with no signs of sputtering and thus provides the possibility of forming dielectric regions of the required sizes and shapes in the process of fabrication of various functional cryoelectronic elements. |
| Databáze: | OpenAIRE |
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