An Experimental Demonstration of Short Circuit Protection of SiC Devices
| Autor: | Eddy Aeloiza, Arun Kadavelugu, Pietro Cairoli, Rostan Rodrigues |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Mechanical Engineering 020208 electrical & electronic engineering 05 social sciences Wide-bandgap semiconductor Short circuit protection 02 engineering and technology Condensed Matter Physics Mechanics of Materials MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics 0501 psychology and cognitive sciences General Materials Science business Short circuit 050107 human factors Hardware_LOGICDESIGN |
| Zdroj: | Materials Science Forum. 924:818-821 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.818 |
| Popis: | An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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