High Ge Content SiGe Selective Processes for Source/Drain in Manufacturing the Next Generations of pMOS Transistors

Autor:	Liesbeth Witters, Roger Loo, Benjamin Vincent, W. Vanherle, Andriy Hikavyy, J Dekoster
Rok vydání:	2013
Předmět:	Materials science business.industry Transistor Dichlorosilane Nitride Silane Electronic Optical and Magnetic Materials law.invention PMOS logic chemistry.chemical_compound chemistry law Etching (microfabrication) Optoelectronics Wafer Disilane business
Zdroj:	ECS Journal of Solid State Science and Technology. 2:P282-P286
ISSN:	2162-8777 2162-8769
Popis:	Selectivity of different SiGe processes toward oxide and nitride has been studied on both: blanket and patterned Si wafers. Three different precursors: silane, dichlorosilane and disilane were used for SiGe growth. It was found that the growth of SiGe with Ge content higher than 35% was intrinsically selective toward SiO2; SiGe with any Ge content, up to pure Ge, could not be grown selectively toward nitride; in order to get selectivity toward nitride, an etching gas should be used and its amount in the gas phase decreases with an increase of the Ge content.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9f06d8f3049e5eac9f1de1b117fd894c https://doi.org/10.1149/2.009306jss Zobrazit plný text záznamu