Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation
| Autor: | P. Kern, Dominique Muller, Daniel Mathiot, C. Dutto, Eric Fogarassy, Dominique Ballutaud |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Dopant Excimer laser business.industry medicine.medical_treatment Doping General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Excimer Surfaces Coatings and Films Ion chemistry.chemical_compound chemistry Silicon carbide medicine Optoelectronics p–n junction business Diode |
| Zdroj: | Applied Surface Science. :292-297 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(02)01357-0 |
| Popis: | As an alternative to classical thermal heating, laser annealing (LA) was recently demonstrated to be suitable for the electrical activation of ion-implanted dopants in SiC. In this work, we demonstrate the possibility to anneal the Al+ ion-implantation induced damage into 4H-SiC by solid phase laser processing using a XeCl excimer source of 200 ns-pulse duration. The electrical activation of the Al dopant was confirmed by I–V measurements performed directly on mesa pn junction diodes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect