| Popis: |
In the frame of hydrodynamical approach a technology of plasma-chemical etching silicon in CF 4 /H 2 plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F 2 , CF 2 , CF 3 , CF 4 , C 2 F 6 , H, H 2 , HF, CHF 3 , CH 2 F 2 . In the etching process a most part of fluorine goes on formation of component HF, that essentially reduces the etching rate of silicon. On the wafer surface it is formed the adsorption layer CF 2 , which at 40 % H 2 completely covers a silicon surface and stops the etching process. |
