| Autor: |
Vincent Mosser, Youcef Haddab, David Seron |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Proceedings of the 2015 International Conference on Microelectronic Test Structures. |
| Popis: |
We propose a new method suited for the extraction of the threshold voltage in 2D Field-Effect-Transistors. It can be applied to various classes of devices where the mobility exhibits a power-law dependence on carrier concentration, μ ∝ n S α. The result doesn't depend on contact resistance. The method provides a physically sound value: V G -V T is proportional to the channel carrier density as checked with V G -dependent Hall measurements in companion gated Hall devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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