| Popis: |
Heteroepitaxial GaP films were grown on MgAl 2 O 4 spinel substrates by a two-stage epitaxial process. The nucleation and initial film growth are achieved by a vapor phase growth technique. Further film growth and p-n junctions were obtained by the liquid phase epitaxial technique. The epitaxial film-substrate composites were characterized by X-ray diffraction and topography, scanning electron microscopy, and electrical measurements. Information was obtained on the epitaxial orientation relationships, crystalline perfection, surface structure, and electrical characteristics. Electroluminescent diodes were successfully fabricated from GaP p-n junctions grown on spinel. |
