Dependence of gate control on the aspect ratio in metal/metal-oxide/metal tunnel transistors

Autor:	P. M. Campbell, R. W. Rendell, E. S. Snow, F. A. Buot, D. Park, R. Magno, C. R. K. Marrian
Rok vydání:	1998
Předmět:	Materials science business.industry Transconductance Transistor Niobium Oxide General Physics and Astronomy chemistry.chemical_element Aspect ratio (image) law.invention chemistry.chemical_compound Semiconductor chemistry law Optoelectronics Output impedance business Quantum tunnelling
Zdroj:	Journal of Applied Physics. 84:1133-1139
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.368114
Popis:	The design criteria for large transconductance/high output impedance or high-gain operation of metal-oxide tunneling transistors is given. The dependence of the gate control on the aspect ratio of thickness to width of the tunneling oxide is investigated by computer simulation. This device structure can only operate similar to conventional semiconductor transistors for aspect ratio considerably less than one. It ceases to function as a transistor for larger aspect ratio due to insufficient penetration of the gate control field into the tunneling oxide. To demonstrate this, the current–voltage characteristics are computed for aspect ratios equal to 7/30, 1, 21/10, and the different tunneling-current behaviors compared with our experimental results on Ti/TiOx/Ti and Nb/NbOx/Nb tunnel transistors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9ecd356e0140cb90f4bf0e395f559312 https://doi.org/10.1063/1.368114 Zobrazit plný text záznamu