Kinetics of AsCl3 chemical beam etching of GaAs(001), (111)A and (111)B surfaces

Autor:	J.L. Guyaux, J.M. Ortion, M. Kappers, Yvon Cordier, J. Ch. Garcia, E Chirlias
Rok vydání:	1999
Předmět:	Range (particle radiation) Kinetics Analytical chemistry chemistry.chemical_element Mineralogy Substrate (electronics) Condensed Matter Physics Chemical beam epitaxy Inorganic Chemistry chemistry Etching (microfabrication) Materials Chemistry Reactive-ion etching Arsenic Beam (structure)
Zdroj:	Journal of Crystal Growth. :614-618
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)01422-5
Popis:	In situ AsCl3 etching of (1 1 1)A, (1 1 1)B and (0 0 1) GaAs layers has been studied as a function of substrate temperature in the range of 450–600°C. The (1 1 1)A and (0 0 1) show qualitatively the same etching behavior. For both substrates, the etching rate is thermally activated below 500°C and stays constant for higher temperature. In contrast, the (1 1 1)B plane is not etched for temperature lower than 540°C. The difference in etching behavior between (1 1 1)A and (1 1 1)B is tentatively explained from the relative arsenic surface concentration stability of the (1 1 1)A and (1 1 1)B surface temperature. The strong temperature dependence of etching rate between (1 1 1)A and (1 1 1)B plane explains qualitatively the different shape the edges observed when GaAs(0 0 1) selective area etching is performed through SiO2 mask openings.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9ec62c4af72ba486b2ec4b449009480b https://doi.org/10.1016/s0022-0248(98)01422-5 Zobrazit plný text záznamu Full Text from ScienceDirect