Enhancement of photoluminescence intensity and structural change by doping of P 5+ ion for Ca 2−x/2 (Si 1−x P x )O 4 :Eu 2+ green phosphor
| Autor: | Hiroki Banno, Shohei Furuya, Nobuyuki Yokoyama, Hiromi Nakano, Koichiro Fukuda |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Photoluminescence Annealing (metallurgy) Mechanical Engineering Doping Metals and Alloys Analytical chemistry Mineralogy Phosphor 02 engineering and technology Crystal structure 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Structural change Mechanics of Materials X-ray crystallography Materials Chemistry 0210 nano-technology Luminescence |
| Zdroj: | Journal of Alloys and Compounds. 658:147-151 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2015.10.172 |
| Popis: | The study of P-doped Ca2SiO4 (C2S) structure has demonstrated that the incorporation of P effectively stabilizes the high-temperature phases. In this work, we synthesize a series of (Ca2−x/2−yEuy□x/2) (Si1−xPx)O4 (0 ≤ x ≤ 0.20, 0.02 ≤ y ≤ 0.05) green-light emitting phosphors and discuss the influence of P concentration on the luminescence intensity and structural change of the host material. The phosphor is synthesized by a solid–state reaction and heated at 498 K for 6 h, and then at 1273 K for 8 h in air. Doping of Eu2+ is achieved by annealing the Eu2O3-containing materials at 1473 K for 3 h under a 90% N2–10% H2 reductive atmosphere. A phosphor with x = 0.04 and y = 0.03 shows the highest PL intensity, which is obviously higher than that of the P-free phosphor (x = 0) due to the structural change of the host material. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect