Development of wafer scale encapsulation process for large displacement piezoresistive MEMS devices
| Autor: | Vipin Ayanoor-Vitikkate, Kuan-Lin Chen, Woo-Tae Park, Thomas W. Kenny |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Microelectromechanical systems
Materials science Fabrication Silicon Metals and Alloys Silicon on insulator chemistry.chemical_element Gyroscope Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Piezoresistive effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry law Hardware_INTEGRATEDCIRCUITS Deep reactive-ion etching Wafer Electrical and Electronic Engineering Instrumentation |
| Zdroj: | Sensors and Actuators A: Physical. 156:275-283 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/j.sna.2009.09.001 |
| Popis: | The goal of the presented work is to develop and demonstrate a fabrication process for thin film encapsulation of MEMS devices with large gaps by modifying an existing technique. The process is being developed for encapsulation of silicon micro machined gyroscope which will be fabricated on SOI (silicon-on-insulator) wafers using Bosch DRIE etching technique. The encapsulation of the device is carried out using epitaxial polysilicon in order to provide a high vacuum inside the device chamber. This technique helps in reducing the die area and the vacuum inside the encapsulation increases the quality factor Q and sensitivity of the device. In this paper we describe a unique method of wafer scale encapsulation of large gaps using sacrificial silicon structures that are completely oxidized. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect