Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors
| Autor: | Asmiet Ramizy, Basant A. Ali, Zainal Abidin Talib, Asad A. Thahe, Nageh K. Allam, M.S. Al-Ghamdi, Hasan Alqaraghuli, Dauda Abubakar, M.A. Qaeed, Mohamed Bououdina, Nroiah Bidin, Hazri Bakhtiar, Zainuriah Hassan, Mohammed A. Al-Azawi, M.B. Uday |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Annealing (metallurgy) business.industry Photoconductivity Organic Chemistry Photodetector Biasing 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Inorganic Chemistry Responsivity Sputtering 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Physical and Theoretical Chemistry 0210 nano-technology business Spectroscopy Dark current |
| Zdroj: | Optical Materials. 84:830-842 |
| ISSN: | 0925-3467 |
| DOI: | 10.1016/j.optmat.2018.08.027 |
| Popis: | The effect of the annealing temperature on the photoelectrical properties of the nanoporous silicon/zinc oxide nanocrystallites-based (Pt/n-PSi/ZnO NCs/Pt) photodetector was investigated. Different morphologies of 3D ZnO were synthesized onto the n-PSi substrates via radio frequency (RF) sputtering in the absence of a catalyst. The synthesis of ZnO NCs was controlled by varying the growth temperature between 600–700 °C and 800–900 °C. The effect of the synthesis temperature on the structural, morphological, and optical properties of the n-PSi/ZnO NCs was systematically studied using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL) techniques. The roughness was found to be dependent on the anodization current density. The optimal n-PSi/ZnO NCs-based metal-semiconductor-metal UV detector (MSM) was fabricated at 700 °C. The fabricated device showed a high sensitivity of 1007.14, an internal photoconductive gain of 11.07, and a responsivity of 5.99 A/W with a low dark current when illuminated with 380 nm light (1.55 mW/cm2) at +5 V bias voltage. In addition, the response and recovery times were determined to be 0.34 and 0.22 s, respectively. This approach offers a cost-effective substrate and simple synthesis method to improve the growth of the n-PSi/ZnO NCs and demonstrates the successful fabrication of nanoscale photodetectors with potential application in nano-optics devices. |
| Databáze: | OpenAIRE |
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