Vacuum ultraviolet driven chemical vapor deposition of localized aluminum thin films
| Autor: | W. R. Fenner, T. A. Galantowicz, A. R. Calloway |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Photochemistry Surfaces Coatings and Films Semiconductor chemistry Physical vapor deposition Sapphire Optoelectronics Thin film business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:534-536 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.571925 |
| Popis: | Incoherent vacuum ultraviolet (VUV) light has been used to deposit aluminum from photodissociated trimethylaluminum vapor at room temperature. The depositions of aluminum on quartz, silicon, and sapphire show distinct patterns of the shadow mask that was used to shield areas of the substrate from the VUV light beam. Because of its simplicity and low cost, this new method may provide an attractive alternative to presently used methods for depositing metals, semiconductors, and insulators. |
| Databáze: | OpenAIRE |
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