Gate-Tunable Band Structure of the LaAlO3−SrTiO3 Interface
| Autor: | Alexander Brinkman, Hans Hilgenkamp, M.P. Stehno, A. E. M. Smink, W.G. van der Wiel, J. C. De Boer |
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| Rok vydání: | 2017 |
| Předmět: |
Work (thermodynamics)
Materials science Condensed matter physics Interface (Java) General Physics and Astronomy Nanotechnology 02 engineering and technology Electronic structure 021001 nanoscience & nanotechnology Electron system Gate voltage 01 natural sciences Charge-carrier density 0103 physical sciences 010306 general physics 0210 nano-technology Electronic band structure |
| Zdroj: | Physical Review Letters. 118 |
| ISSN: | 1079-7114 0031-9007 |
| DOI: | 10.1103/physrevlett.118.106401 |
| Popis: | The two-dimensional electron system at the interface between ${\mathrm{LaAlO}}_{3}$ and ${\mathrm{SrTiO}}_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schr\"odinger-Poisson calculations and observe a Lifshitz transition at a density of $2.9\ifmmode\times\else\texttimes\fi{}1{0}^{13}{\mathrm{cm}}^{\ensuremath{-}2}$. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex-oxide interfaces. |
| Databáze: | OpenAIRE |
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