Formation of a Nanophase Wetting Layer and Metal Growth on a Semiconductor
| Autor: | N. I. Plyusnin |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Metal Semiconductor Transition metal Chemical engineering chemistry visual_art 0103 physical sciences Monolayer visual_art.visual_art_medium Wetting 0210 nano-technology business Wetting layer |
| Zdroj: | Technical Physics Letters. 44:980-983 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | Based on the data on the atomic density of a film and degree of its homogeneity during the formation of the interface between 3d transition metals (Cr, Co, Fe, or Cu) and silicon, a new concept of forming a contact between a reactive metal and a semiconductor has been justified. According to this concept, the low-temperature vapor-phase deposition of a metal onto a semiconductor is accompanied by the formation of a two-dimensional nanophase wetting layer of a metal or its mixture with silicon with a thickness of several monolayers, which significantly affects the interface formation and structure. This concept changes a perspective of forming a contact between a metal and a semiconductor substrate: it is necessary to take into account not only the formation of surface phases and clusters and/or the mixing process, but also the effect of elastic wetting of a substrate by the forming phases. |
| Databáze: | OpenAIRE |
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