| Autor: |
Kuan-Wei Lee, Po-Wen Sze, Kai-Lin Lee, Yeong-Her Wang, Mau-Phon Houng, Nan-Ying Yang |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
International Conference on Indium Phosphide and Related Materials, 2005.. |
| DOI: |
10.1109/iciprm.2005.1517546 |
| Popis: |
A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current regimes by the reduction of surface recombination current, as compared to those without surface passivation. In addition, a larger breakdown voltage (23.5 V) and a lower base recombination current (10-12 A) are also obtained |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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