Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures
| Autor: | G.Sh. Gildenblat, Andrzej Badzian, Teresa Badzian, C. W. Hatfield, Russell Messier, Soonil Lee, C.R. Wronski, S.A. Grot |
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| Rok vydání: | 1990 |
| Předmět: |
Materials science
Silicon business.industry Mechanical Engineering Diamond Schottky diode chemistry.chemical_element Chemical vapor deposition engineering.material Condensed Matter Physics Polycrystalline diamond Metal Rectification chemistry Mechanics of Materials visual_art engineering visual_art.visual_art_medium Optoelectronics General Materials Science Crystalline silicon business |
| Zdroj: | Journal of Materials Research. 5:2497-2501 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.1990.2497 |
| Popis: | Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface. |
| Databáze: | OpenAIRE |
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