Properties of aluminum-based cermet thin film resistors
| Autor: | Harold S. Gurev |
|---|---|
| Rok vydání: | 1973 |
| Předmět: |
Materials science
Metals and Alloys Oxide chemistry.chemical_element Surfaces and Interfaces Cermet Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Electrical resistivity and conductivity law Aluminium Materials Chemistry Wafer Thin film Composite material Resistor Temperature coefficient |
| Zdroj: | Thin Solid Films. 18:275-285 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(73)90106-5 |
| Popis: | A family of novel aluminum-aluminum oxide cermet resistance thin films has been deposited by the controlled oxidation of thermally decomposing triethyl aluminum vapor. Film resistivity can be varied, controllably, from 10−2 to 104 Ωcm. Over the range 10−1−103 Ωcm, the temperature coefficient of resistivity decreases monotonically from zero to −1200 ppm/°C. High value resistors having surface resistivities from 1 kΩ/sq. to 1000 MΩ/sq. have been fabricated by conventional aluminum metallization patterning techniques and they are compatible with silicon wafer processing technology. |
| Databáze: | OpenAIRE |
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