Depth profiling free carbon in silicon carbide
| Autor: | Carlo G. Pantano, V. J. Bojan, T. E. Paulson, B. M. Wichterman |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
technology industry and agriculture Analytical chemistry Surfaces and Interfaces equipment and supplies Condensed Matter Physics Surfaces Coatings and Films Ion Carbide Secondary ion mass spectrometry Surface coating chemistry.chemical_compound chemistry Mass spectrum Silicon carbide Molecule Carbide-derived carbon |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1267-1274 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.579872 |
| Popis: | A fingerprint for free carbon was identified from the negative ion mass spectra of various carbon and silicon carbide standards. It was found that high‐mass carbon molecular species can be used to distinguish free carbon in silicon carbide. Secondary ion mass spectrometry (SIMS) depth profiling (12 keV Cs+ primary beam, negative SIMS mode) was used to calculate the useful yield of negatively charged molecular carbon ions from carbon (in various forms) and silicon carbide. The useful yield ratio of C−n molecules from carbon to SiC increased with increasing n, meaning higher mass molecular carbon species are more likely to originate from free carbon than silicon carbide. 72C−6 and 96C−8 species were used to depth profile free carbon in chemically vapor deposited SiC/C coatings on SCS‐0 and SCS‐6 silicon carbide fibers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|