Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire Networks

Autor:	Shi-Ming Peng, Cheng-Zhi Wu, Wei-Bin Cheng, Chi-Nan Tsai, Yan-Kuin Su, Sheng-Joue Young, Liang-Wen Ji, Wan-Chun Chao
Rok vydání:	2011
Předmět:	Materials science business.industry Photoconductivity Transistor Wide-bandgap semiconductor Nanowire Dielectric Electronic Optical and Magnetic Materials law.invention law Logic gate Optoelectronics Field-effect transistor Electrical and Electronic Engineering Photolithography business
Zdroj:	IEEE Electron Device Letters. 32:339-341
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2010.2094600
Popis:	Self-assembling ordered ZnO nanowire (NW) network-based field-effect transistors (FETs) were fabricated by bottom-up photolithography. The devices had on/off ratios of >; 104, mobilities of ~1.31 cm2 V-1 s-1, mobilities of and threshold voltages of ~-1 V. Under UV treatment (340 nm, 57.46 ), the devices exhibited relative photoconductivity ratio increases of at a depletion state of 8 V gate bias (1.56 × 103 A/V). The fabricated FETs exhibit a broad range of electrical characteristics because of variation in the contact quality of the metal/NW, the dielectric/NW, and the NW/NW interfaces. However, the fabricated approach offers a cost-effective route to integrate self-assembled ZnO NW network-based FETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9e7dcb654cd59b6f773ae758dfef4607 https://doi.org/10.1109/led.2010.2094600 Zobrazit plný text záznamu