Erratum to 'The impact of nitrogen on the defect aggregation in silicon'

Autor:	Robert Dipl.-Chem. Dr. Hölzl, D Gräf, E. Dornberger, W. von Ammon, Janis Virbulis, Ruediger Schmolke
Rok vydání:	2002
Předmět:	Inorganic Chemistry Physics Crystal Condensed matter physics Silicon chemistry Materials Chemistry chemistry.chemical_element Mistake Crystal growth Boundary value problem Condensed Matter Physics Circumference
Zdroj:	Journal of Crystal Growth. 240:330
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)02394-6
Popis:	We are greatly indebted to V.V. Voronkov of MEMC, who made us aware of an error in our above paper. By mistake, the wrong V=G curve is shown in Fig. 5. The wrong curve relates to older calculations with inappropriate boundary conditions. The below figure shows the correct shape of V=G as determined by calculations which considered inductive heating effects at the circumference of the growing crystal and used the measured growth interface as a boundary condition (see Section 4 on page 23). We apologize for this careless mistake.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9e7c289d762c1a63fdb1fc5c5ccabe69 https://doi.org/10.1016/s0022-0248(01)02394-6 Zobrazit plný text záznamu Full Text from ScienceDirect