Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode
| Autor: | Gae Hwang Lee, Seon-Jeong Lim, Kyung-Bae Park, Ryuichi Satoh, Yong-young Park, Yeon-hee Kim, Sang Yoon Lee, Ki-deok Bae, Takkyun Ro, Wenxu Xianyu, Chul-Joon Heo, Yong Wan Jin, Dong-Seok Leem, Xavier Bulliard, Woo-Yong Yang, Jong-Bong Park |
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| Rok vydání: | 2017 |
| Předmět: |
Silicon oxynitride
Nanotechnology 02 engineering and technology Chemical vapor deposition 010402 general chemistry 01 natural sciences law.invention Biomaterials Atomic layer deposition chemistry.chemical_compound Plasma-enhanced chemical vapor deposition law Materials Chemistry Electrical and Electronic Engineering Thin film Chemistry business.industry General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Active layer Optoelectronics Quantum efficiency Photolithography 0210 nano-technology business |
| Zdroj: | Organic Electronics. 41:259-265 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2016.11.013 |
| Popis: | A novel approach for the thin film encapsulation (TFE) of organic photo-diode (OPD) for the next generation of organic/inorganic hybrid complementary metal oxide semiconductor (CMOS) image sensor is reported. The TFE is composed of two different metal-oxides stacked in bi-layer thin film architecture. The first layer is composed of aluminum oxide (AlOx) deposited by atomic layer deposition (ALD) at a moderate temperature of 100 °C to avoid any damage to the organic active layer. The first layer acts as a water barrier layer and also as a first protective layer for the deposition of a second silicon oxynitride (SiON) layer that could be processed by plasma-enhanced chemical vapor deposition (PECVD) at higher temperatures. The second layer ensures a better mechanical and chemical stability of the whole structure and also serves as a second protective layer from damages induced during the additional processing stages, such as photolithography or microlensing. With the TFE architecture the overall device stability at 85 °C and 85% relative humidity exceeded 1000 h without observable device performance decrease. This was confirmed by fabricating a green-light sensitive OPD characterized by a stable external quantum efficiency of 60–70%. |
| Databáze: | OpenAIRE |
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