Graded electronic structure in a 3 nm strainedGe40Si60quantum well
| Autor: | Philip E. Batson, J. F. Morar |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry General Physics and Astronomy Biaxial tensile test Electronic structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Molecular physics Dark field microscopy Band offset Optics Density of states business Electronic band structure Excitation Quantum well |
| Zdroj: | Physical Review Letters. 71:609-612 |
| ISSN: | 0031-9007 |
| DOI: | 10.1103/physrevlett.71.609 |
| Popis: | Spatially resolved electron energy loss spectra of the Si 2p core excitation are obtained in transmission through a single cross section of a 3 nm thick Ge 40 Si 60 quantum well. The spectra yield the positions of the L 1 and Δ 1 conduction band minima, and the biaxial strain splitting of Δ 1 . From annular dark field images, the well composition appears to be graded over three to four layers on the cap side. The conduction band offset varies from 0 eV at the well edge to +25 meV in the well center, relative to the Si substrate and cap. The biaxial strain splitting is 0.28 eV in the well center and shows an asymmetry with position that is consistent with the annular dark field data |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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