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Rapid growths in the electronic industries provide opportunities for the industries to expand the using of silicon wafer in modern and advanced technologies especially Micro Electromechanical Systems (MEMS). Laser cutting is one of the most significant and important application for fabrication MEMS components. The objective of this study is to investigate the cutting capability of industrial laser, CO2 laser, in silicon wafer processing. Experiment was conducted in two conditions which is with assisted of pyrex glass and without assist of pyrex glass. In this work, silicon wafer with thickness 525 μm were cut into several rectangular sample shapes. The surface roughness produce at the cutting edge on each sample were investigated and analyzed. Analysis of Variance (ANOVA) was used to analyze the result and generated an appropriate model for the laser cutting processing. The laser parameters involved were laser power, cutting speed, and pulse frequency. Experimental results evident that, the laser cutting process with assist of glass give a better surface roughness on silicon cutting edge compared to without assist of glass. |
