Improved Uniformity of Reacted GaAs Contacts by Interface Mixing

Autor:	M. J. Hollis, James W. Mayer, S. D. Mukherjee, Karen L. Kavanagh, C. J. Palmrøm
Rok vydání:	1984
Předmět:	Materials science Ion beam mixing Interface (Java) business.industry Optoelectronics business Mixing (physics)
Zdroj:	MRS Proceedings. 37
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-37-473
Popis:	Ion beam mixing is used to produce more uniform Au.Au-Ge and Au-Ge-Ni reacted contacts to GaAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9e5f3badfe9579ac0f19f86b305a9014 https://doi.org/10.1557/proc-37-473 Zobrazit plný text záznamu Full text from SpringerLink