Electron dose dependence and oxygen implantation effect on cathodoluminescence intensity in synthetic silica glass
| Autor: | Norman Tolk, Alan V. Barnes, Yukihiro Morimoto, R. A. Zuhr, Robert A. Weeks |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Range (particle radiation)
business.industry Chemistry Analytical chemistry chemistry.chemical_element Cathodoluminescence Condensed Matter Physics Oxygen Electronic Optical and Magnetic Materials Optics Excited state Materials Chemistry Ceramics and Composites Cathode ray Irradiation business Luminescence Beam (structure) |
| Zdroj: | Journal of Non-Crystalline Solids. 203:62-68 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(96)00335-3 |
| Popis: | A luminescence band at 2.75 eV in silica glass, Corning 7940, excited with 1 keV electron beam was measured as a function of beam current and dose. The initial luminescent intensities at 2.75 eV, taken within 1 s of the beginning of irradiation, were proportional to the beam current in the range 0.8 to 12.7 μA/mm2. The luminescent intensities as a function of dose were observed at current densities of 3.0, 4.8, and 12.7 μA/mm2. The intensities increased linearly for doses |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect