Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy

Autor:	A. V. Batunina, M. Porrini, H.C. Alt, Roberto Scala, R. Wolf, M.G. Pretto
Rok vydání:	2005
Předmět:	Electron mobility Silicon Chemistry Electrical resistivity and conductivity Hall effect Analytical chemistry Calibration chemistry.chemical_element Infrared spectroscopy General Materials Science General Chemistry Fourier transform infrared spectroscopy Boron
Zdroj:	Applied Physics A. 81:1187-1190
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-004-3032-0
Popis:	The calibration factors for the determination of boron and phosphorus concentration in single crystal silicon by low temperature Fourier transform infrared spectroscopy are examined, with the aim of comparing the behaviour of float-zone and Czochralski samples. It is shown that common calibration factors, derived from a correlation with four-point probe resistivity measurement, can be applied to both material types. Moreover, no significant difference in carrier mobility is observed between FZ and CZ, as determined by Hall effect measurements, in a wide oxygen range: 2–9×1017 cm-3, confirming that the same conversion algorithm to deduce the carrier concentration from the resistivity measurement can be applied.
Databáze:	OpenAIRE
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