HBr-K2Cr2O7-H2O etching system for indium phosphide
| Autor: | Roberto Fornari, J.L. Weyher, T. Görög |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Materials science
Mechanical Engineering Diffusion Polishing Condensed Matter Physics Engraving Crystallographic defect chemistry.chemical_compound Crystallography chemistry Mechanics of Materials Etching (microfabrication) visual_art Indium phosphide visual_art.visual_art_medium General Materials Science Well-defined Dislocation |
| Zdroj: | Materials Science and Engineering: B. 28:488-492 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(94)90112-0 |
| Popis: | InP surfaces, with (100), (111)In and (111)P orientations were etched with HBr-K2Cr2O7-H2O (BCA) solutions. Etching could be diffusion controlled (giving rise to polishing) or purely kinetically controlled (revealing crystallographic defects), depending on the solution composition. These experimental results have been summarized in a BCA ternary diagram which allows complete surface treatment of indium phosphide. Solutions from the HBr-rich corner of the ternary diagram produce well defined crystallographic pits on dislocations. Rectangular pits formed on (100)-oriented samples are suitable for an unequivocal definition of the [0 1 1] direction. It has been shown that the high elongation factor of the pits (ratio of length to width) distinguishes the BCA system over other etchants currently used for the same purpose. From the details of the pit morphology it is possible to recognize the decoration effect and different inclinations of the dislocation lines relative to the surface. |
| Databáze: | OpenAIRE |
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