Determination of Franz-Keldysh electrorefraction near the GaAs absorption edge using epitaxial liftoff thin film semiconductor etalons

Autor:	Nan Marie Jokerst, K.H. Calhoun
Rok vydání:	2002
Předmět:	Materials science business.industry Heterojunction Epitaxy Electrical contacts Gallium arsenide chemistry.chemical_compound Semiconductor Optics chemistry Absorption edge Optoelectronics Thin film business Refractive index
Zdroj:	Proceedings of LEOS '93.
DOI:	10.1109/leos.1993.379198
Popis:	We report the first direct measurement of near-band edge (within several meV) Franz-Keldysh electrorefraction in GaAs using thin film, P-i-N double heterostructures and MSM structures fabricated using epitaxial liftoff processing. Thin metallic films are applied to the top and bottom surfaces of the devices and are used as both electrical contacts and mirrors. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9e2f0bfd0d56a3fc8e81f144acf438e5 https://doi.org/10.1109/leos.1993.379198 Zobrazit plný text záznamu