Effect of irradiation on the optical, electrophysical, and surface properties of GaAlAs heterostructures

Autor:	N. I. Kurdiani, É. R. Kuteliya, G. A. Kartsivadze, N. A. Golodze
Rok vydání:	1984
Předmět:	Materials science Solid-state physics business.industry General Physics and Astronomy chemistry.chemical_element Heterojunction Electron Auger law.invention chemistry Aluminium law Electron beam processing Optoelectronics Irradiation Electron microscope business
Zdroj:	Soviet Physics Journal. 27:627-630
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf00897464
Popis:	The effect of irradiation with 3.5-MeV electrons on the properties of GaAlAs-based light-emitting structures is investigated. It is shown that the considerable reduction in the intensity of light emitted as a result of electron irradiation is not accompanied by changes in the recombination and electrical properties of the structures mentioned. Electron microscope and Auger spectral measurements have established that electron irradiation leads to the appearance on the external surface of the n layer of the structure regions of free aluminum accumulation, the number and size of which depend on the electron dose. The assumption is advanced that the regions mentioned may play the role of a gray filter for the light emitted by the structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9e2a82a9588f5bd196409c79a5387961 https://doi.org/10.1007/bf00897464 Zobrazit plný text záznamu Full text from SpringerLink