Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)
| Autor: | Marjorie A. Olmstead, J. Morales, E. G. Villora, Tracy C. Lovejoy, N. Shamir, K. Shimamura, Fumio S. Ohuchi, S. Zheng, E. N. Yitamben |
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| Rok vydání: | 2009 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Low-energy electron diffraction Photoemission spectroscopy Chemistry Analytical chemistry chemistry.chemical_element Angle-resolved photoemission spectroscopy Electronic structure Molecular physics law.invention Electron diffraction law Gallium Scanning tunneling microscope Single crystal |
| Zdroj: | Applied Physics Letters. 94:081906 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide (β-Ga2O3) have been conducted using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES). Atomically resolved STM and LEED results for the β-Ga2O3(100) surface clarify that the predominant surface termination contains both gallium and oxygen, and this surface does not exhibit a reconstruction. The valence band structure was obtained with ARPES and shows good agreement with existing theoretical works at the zone center and along the a∗ and c∗ directions, except that the calculated bandwidth is ∼7% too small. There is poorer agreement along the b∗ direction, where the experimental bands disperse more strongly than the calculations. |
| Databáze: | OpenAIRE |
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