Autor: |
Jung-han Kim, Jun-Sung Kim, Suk-Soo Pyo, Young-Keun Lee, Taejoong Song, Gyu-Hong Kim, Kee-Sup Kim, Cheol-Ha Lee, Hyun-Taek Jung |
Rok vydání: |
2012 |
Předmět: |
|
Zdroj: |
CICC |
DOI: |
10.1109/cicc.2012.6330622 |
Popis: |
In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with the conventional scheme. A 266-Mb eSDRAM with SB-PM scheme is designed in a 45-nm CMOS technology showing 51.2-mW dynamic power and 2.05mW standby power consumption at VDD=0.65V and 85˚C. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|