Epitaxial and interface properties of InAs/InGaSb multilayered structures
| Autor: | H. D. Shih, A. Vigliante, T. D. Golding, J. M. Anthony, J. T. Zborowski, P. C. Chow, W. C. Fan |
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| Rok vydání: | 1992 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 71:5908-5912 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.350490 |
| Popis: | We have used the technique of molecular beam epitaxy to grow InAs on GaSb, GaSb on InAs, and InAs/InxGa1−xSb (0≤x≤0.4) multilayered structures and have performed a detailed investigation of the layers and resultant interfaces. The structures were grown on (100) oriented GaSb or GaAs substrates. Combined reflection high energy electron diffraction, x‐ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) studies indicate that Sb is persistently present on the InAs growth surface. XPS and AES analysis of InAs/GaSb heterojunctions indicates no compound formation at either the InAs/GaSb or GaSb/InAs interface. Secondary ion mass spectroscopy (SIMS) and XPS extinction profiles reveal the presence of approximately 5–10% As in the nominally pure GaSb layers. Analysis of InAs/GaSb/GaSb (100) structures by SIMS indicates that the As is incorporated during growth. The multilayer structures have been characterized by double crystal x‐ray diffraction and the data has been modeled using kinematic ... |
| Databáze: | OpenAIRE |
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