| Autor: |
H. Thomas, D. V. Morgan, S. W. Bland, Y.H. Aliyu |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95. |
| DOI: |
10.1109/edmo.1995.493699 |
| Popis: |
Low turn-on voltage AlGaInP/GaInP surface emitting LEDs have been achieved using a thermally evaporated transparent conducting Indium Tin Oxide (ITO) layer. The devices have lower forward series resistance (1-3) ohms compared to standard Au/Zn devices which have a series resistance greater than 5 ohms. The ITO/AlGaInP LEDs emit orange light, with a peak wavelength of 600 nm and full width at half maximum (FWHM) of 15 nm. A forward voltage of typically 1.70 V at 20 mA was obtained. Variations in the thicknesses of the cladding and GaAs cap layer thicknesses did not cause any significant change in the device turn-on voltages. Evidence of reduced junction heating has been observed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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