HVPE GaN for high power electronic Schottky diodes
| Autor: | Jacob H. Leach, Shuai Zhou, Kenneth A. Jones, Fatemeh Shahedipour-Sandvik, Michael A. Derenge, Robert Metzger, Mihir Tungare, Randy P. Tompkins, Puneet Suvarna, Cuong B. Nguyen, Timothy A. Walsh, G. Mulholland, K.W. Kirchner |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Hydride Schottky diode chemistry.chemical_element Condensed Matter Physics Epitaxy Crystallographic defect Electronic Optical and Magnetic Materials chemistry Materials Chemistry Optoelectronics Figure of merit Wafer Electrical and Electronic Engineering business Carbon Voltage |
| Zdroj: | Solid-State Electronics. 79:238-243 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2012.07.003 |
| Popis: | Hydride vapor phase epitaxy (HVPE) grown GaN was evaluated for high power Schottky diodes (SDs) because it contains much less carbon and grows much more rapidly than other typical growth methods. The results are encouraging for applications |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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