Screen-Printing Process on 20 Micron Thick Epitaxial UMG Multicrystalline-Si Solar Cells (Efficiencies up to 14.5 %)

Autor: Récaman Payo, M., De Vecchi, S., Norton, M., Sivaramakrishnan Radhakrishnan, H., Van Nieuwenhuysen, K., Kuzma-Filipek, I., Van Hoeymissen, J., Dross, F., Poortmans, J.
Jazyk: angličtina
Rok vydání: 2010
Předmět:
DOI: 10.4229/25theupvsec2010-3bv.3.31
Popis: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3646-3650
Epitaxial silicon thin-film solar cell technology, consisting of a thin high-quality epitaxial stack on top of a non-active highly-doped low-cost silicon substrate, is a promising alternative for cost-effective industrial solar cell manufacturing. In the scope of this technology, this work demonstrates efficiency improvement of an industrial process based on screen-printing for epitaxial solar cells on up-graded metallurgical grade multicrystalline silicon (UMG-Si) substrates. The cell concept under investigation consists of a 20 μm thick active device, including the p+-type back surface field (BSF), the p-type base and the n-type front-side emitter, grown by chemical vapor deposition (CVD). Lighttrapping is improved by plasma texturing of the front surface in combination with an internal porous silicon reflector positioned at the epitaxial/substrate interface. We report on the most recent improvements of several attractive features in these devices (the epitaxial BSF, the epitaxial emitter and the plasma texturing on epitaxial emitters) as well as their effect on the solar cell performance and process. So far, cell efficiencies up to 14.5 % have been achieved.
Databáze: OpenAIRE